With the presented improved switch, the phase noise varies no more than 3dB at different digital control bits. Using the device simulator ISE TCAD We simulated a novel fabrication technique of the formation of Ohmic contact with n+ polycrystal silicon/n+ SiC heterojunctions. The overlap of two adjacent PTCAD molecules due to the presence of delocalized large π bonds and the compact combination of the p-rings in PTCDA molecules and vacancies in ITO are the factors which eventually lead to the formation of PTCAD island-like structures. Oxide traps generated by stress will cause the increase of stress-induced leakage current and the decrease of charge to breakdown, and it may also cause the degradation of off-state drain leakage current. Using a time-dependent two-dimensional heat conduction model, we analyzed temperature distribution and time evolution in the waveguide layer of ridge-shaped InGaN laser diodes grown and fabricated on sapphire substrate. We have proposed a new approach to design and implement an interpolation filter. The design has been implemented.. Accordingly, it is necessary to consider these factors when designing molecular devices based on doped nanotubes. By improving the materials growth and the process, we obtained a maximum PVCR of the device at room temperature of 2.4 and a peak current density of 36.8kA/cm2. The test results showed that the power consumption of the transceiver was 127mW/channel. Si/Si bonding has been achieved at low temperatures by introducing Ti/Au layers. The bonding temperature can be reduced to 414℃. These properties make such devices more suitable for the application aspects of low-voltage, low-power, and high-frequency. We measured the DC parameters after radiation and annealing. However, CIGS films with the same composition may have different preferential crystallization orientations, most of which are of two orientations, (112) and (220)/(204). The crystallization morphologies also diverge significantly. The film cell with a larger grain size and a column shape has a higher efficiency. Although the CIGS films are considered to be Cu-poor structures from the compositions of Cu/(In+Ga)<1, most of the CIG as determined by Hall measurement. By high-pressure hydrogen loading, with KrF excimer laser pulses (operating at wavelength of 248nm), the variation of the induced refractive index of the waveguide material reaches 0.005, a relative increase of 0.34%. By applying a relatively strict mathematical treatment to the measured reflection spectra and transmission spectra, we calculate the important physical quantities describing the macroscopic optical properties of thin film, i.e., the absorption coefficient, extinction coefficient, and refractive index of thin film